ssf1007 100v n-channel mosfet www.goodark.com page 1 of 5 rev.1.0 main product characteristics v dss 100v typ r ds (on) 6mohm typ i d 130a features and benefits ssf1007 top view (to-220) ? advanced trench mosfet process technology ? special designed for convertors and power controls ? ultra low on-resistance ? 150 operating temperature ? high avalanche capability and 100% tested ? lead free product description it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. absolute max rating symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 130 id @ tc = 100c continuous drain current, vgs @ 10v 91 idm pulsed drain current 520 ism pulsed source current.(body diode) 258 a power dissipation 1.7 w pd @tc = 25c linear derating factor 20 w/ c? vds drain-source voltage 735 v vgs gate-to-source voltage 75 v dv/dt peak diode recovery voltage -55 to + 175 v/ns eas single pulse avalanche energy @ l=0.3mh 130 mj iar avalanche current @ l=0.3mh 91 a tj tstg operating junction and storage temperature range 520 c thermal resistance symbol characteristics value unit r jc junction-to-case 0.58 /w r ja junction-to-ambient ( t 10s) 62 /w
ssf1007 100v n-channel mosfet www.goodark.com page 2 of 5 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 100 v vgs = 0v, id = 250a rds(on) static drain-to-source on-resistance 5 6 m vgs = 10v, id = 75a vgs(th) gate threshold voltage 2 4 v vds = vgs, id = 250a 20 vds = 100v, vgs = 0v idss drain-to-source leakage current 250 a vds = 80v, vgs = 0v, tj = 125c gate-to-source forward leakage 100 vgs = 20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 243 170 qgs gate-to-source charge 47 qgd gate-to-drain("miller") charge 92 nc id = 75a vds = 50v vgs = 10v td(on) turn-on delay time 28 tr rise time 108 td(off) turn-off delay time 123 tf fall time 120 ns vdd = 65v id = 75a rg = 2.7 vgs = 10v ciss input capacitance 8456 coss output capacitance 454 crss reverse transfer capacitance 417 pf vgs = 0v vds = 50v ? = 500khz source-drain ratings and characteristics parameter min. typ. max units conditions is continuous source current (body diode) 130 mosfet symbol showing the integral reverse p-n junction diode. ism pulsed source current (body diode) 520 a tj = 25c, is = 75a, vgs = 0v vsd diode forward voltage 1.3 v tj = 25c, if = 75a, vdd = 20v di/dt = 100a/s trr reverse recovery time 57 70 ns qrr reverse recovery charge 156 170 nc tj = 25c, if = 75a,vgs=0v di/dt = 100a/s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
ssf1007 100v n-channel mosfet www.goodark.com page 3 of 5 rev.1.0 typical electrical and thermal characteristics figure 1. typical output characteristics figure 2. typical transfer characteristics figure 3.typical capacitance vs. drain-to-source voltage figure 4. normalized on-resistance vs. case temperature figure 5. drain-to-source breakdown voltage vs. temperature figure 6. maximum drain current vs. case temperature
ssf1007 100v n-channel mosfet www.goodark.com page 4 of 5 rev.1.0 typical electrical and thermal characteristics notes: repetitive ra ting; pulse width limited by max. junction temperature. limited by tjmax, starting tj = 25c, l = 0. 3mh rg =50, ias = 70a, vgs =10v. part not recommended for use above this value. pulse width < 1.0ms; duty cycle<2%. this is only applied to to-220 package. switch waveforms figure 7. maximum effective transient thermal impedance, junction-to-case
ssf1007 100v n-channel mosfet www.goodark.com page 5 of 5 rev.1.0 mechanical data to-220
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